TOSHIBA 
معرفی
ماسفت 650 ولت 7.8 آمپر نوع N با پکیج DPAK-3
N-CH MOSFET 650V, 7.8A with DPAK-3 Package
Specifications
- Package/Case: DPAK
- Vds - Drain - Source Breakdown Voltage: 650V
- Id - Continuous Drain Current: 7.8A
- Transistor Polarity: N-Channel
- Channel Mode: Enhancement
- Number of Channels: 1
- Vgs th - Gate - Source Threshold Voltage: 2.5V
- Vgs - Gate - Source Voltage: ±30V
- Rds On - Drain - Source Resistance: 550mΩ
- Pd - Power Dissipation: 80W
- Qg - Gate Charge: 16nC
- Mounting Style: SMD/SMT
- Minimum Operating Temperature: -55C
- Maximum Operating Temperature: +150C
- Packaging: Reel
مشخصات ماسفت TK8P65W,RQ
ماسفت TK8P65W,RQ
Part Number
1
Number of Channels
Enhancement
Channel Mode
-55C
Minimum Operating Temperature
Reel
Packaging
SMD/SMT
Mounting Style
±30V
Vgs - Gate - Source Voltage
+150C
Maximum Operating Temperature
650V
Vds - Drain - Source Breakdown Voltage
2.5V
Vgs th - Gate - Source Threshold Voltage
16nC
Qg - Gate Charge
7.8A
Id - Continuous Drain Current
DPAK
Package-Case
80W
Pd - Power Dissipation
550mΩ
Rds On - Drain - Source Resistance
