TOSHIBA 
مشخصات ماسفت TK58E06N1
ماسفت TK58E06N1
Part Number
1
Number of Channels
Enhancement
Channel Mode
N-Channel
Transistor Polarity
-55C
Minimum Operating Temperature
Tube
Packaging
Through Hole
Mounting Style
±20V
Vgs - Gate - Source Voltage
+150C
Maximum Operating Temperature
60V
Vds - Drain - Source Breakdown Voltage
4.4mΩ
Rds On - Drain - Source Resistance
2V
Vgs th - Gate - Source Threshold Voltage
46nC
Qg - Gate Charge
110W
Pd - Power Dissipation
105A
Id - Continuous Drain Current
TO-220-3
Package-Case
