HCG65140DAA
HCG65140DAA
Part Number
5683
Lion Part
Datasheet
HXY MOSFET Manufacture
ترانزیستور قدرت GaN-on-Silicon تقویتی (Enhancement) نوع N با ولتاژ 650 ولت و جریان 17 آمپر با پکیج DFN-8 دوطرفه بدون پایه سایز 8mmx8mm
GaN-on-Silicon Enhancement-mode N-Channel Power Transistor 650V, 17A with Dual Flat No-lead (DFN-8) Package, 8 mm × 8 mm size
معرفی
ترانزیستور قدرت GaN-on-Silicon تقویتی (Enhancement) نوع N با ولتاژ 650 ولت و جریان 17 آمپر با پکیج DFN-8 دوطرفه بدون پایه سایز 8mmx8mm
GaN-on-Silicon Enhancement-mode N-Channel Power Transistor 650V, 17A with Dual Flat No-lead (DFN-8) Package, 8 mm × 8 mm size
Specifications
- Package/Case: DFN-8
- Vds - Drain - Source Breakdown Voltage: 650V
- Id - Continuous Drain Current: 17A
- Transistor Polarity: N-Channel
- Channel Mode: GaN
- Number of Channels: 1
- Vgs th - Gate - Source Threshold Voltage: 1.2V
- Vgs - Gate - Source Voltage: +7V
- Rds On - Drain - Source Resistance: 100mΩ
- Pd - Power Dissipation: 113W
- Qg - Gate Charge: 3.3nC
- Mounting Style: SMD/SMT
- Minimum Operating Temperature: -55C
- Maximum Operating Temperature: +150C
- Packaging: Reel
مشخصات گان فت HCG65140DAA
گان فت HCG65140DAA
Part Number
1
Number of Channels
GaN
Channel Mode
-55C
Minimum Operating Temperature
Reel
Packaging
+7V
Vgs - Gate - Source Voltage
SMD/SMT
Mounting Style
3.3nC
Qg - Gate Charge
+150C
Maximum Operating Temperature
650V
Vds - Drain - Source Breakdown Voltage
1.2V
Vgs th - Gate - Source Threshold Voltage
DFN-8
Package-Case
17A
Id - Continuous Drain Current
100mΩ
Rds On - Drain - Source Resistance
113W
Pd - Power Dissipation
