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ترانزیستور GaN ماسفت 650 ولت 11.5 آمپر نوع N با درایور گیت داخلی، با پکیج DFN-10
High-Performance 650V GaN N-Channel MOSFET Transistor, 11.5A with Integrated Gate Driver, with DFN-10 Package
Specifications
- Package/Case: DFN-10
- Vds - Drain - Source Breakdown Voltage: 650V
- Id - Continuous Drain Current: 11.5A
- Transistor Polarity: N-Channel
- Channel Mode: GaN
- Number of Channels: 1
- Vgs - Gate - Source Voltage: ±20V
- Rds On - Drain - Source Resistance: 138mΩ
- Pd - Power Dissipation: 50W
- Qg - Gate Charge: 24.5nC
- Mounting Style: SMD/SMT
- Minimum Operating Temperature: -40C
- Maximum Operating Temperature: +125C
- Packaging: Reel
مشخصات CID12N65D(TOKMAS)
CID12N65D(TOKMAS)
Part Number
1
Number of Channels
GaN
Channel Mode
Reel
Packaging
-40C
Minimum Operating Temperature
SMD/SMT
Mounting Style
±20V
Vgs - Gate - Source Voltage
+125C
Maximum Operating Temperature
650V
Vds - Drain - Source Breakdown Voltage
N/A
Vgs th - Gate - Source Threshold Voltage
24.5nC
Qg - Gate Charge
DFN-10
Package-Case
11.5A
Id - Continuous Drain Current
50W
Pd - Power Dissipation
138mΩ
Rds On - Drain - Source Resistance
