VBsemi 
معرفی
ماسفت جفت 30 ولت 8 و 8 آمپر نوع N و P با پکیج SOIC-8
DUAL N/P-CH MOSFET 30V, -30V, 8A, -8A with SOIC-8 Package
Specifications
- Package/Case: SOIC-8
- Vds - Drain - Source Breakdown Voltage: 30V, -30V
- Id - Continuous Drain Current: 8A, -8A
- Transistor Polarity: N-Channel, P-Channel
- Channel Mode: Enhancement
- Number of Channels: 2
- Vgs th - Gate - Source Threshold Voltage: 1V, -1V
- Vgs - Gate - Source Voltage: ±20V
- Rds On - Drain - Source Resistance: 18mΩ, 40mΩ
- Pd - Power Dissipation: 3.2W
- Qg - Gate Charge: 6nC, 41.5nC
- Mounting Style: SMD/SMT
- Minimum Operating Temperature: -55C
- Maximum Operating Temperature: +150C
- Packaging: Reel
مشخصات ماسفت IRF7105TRPBF-VB
ماسفت IRF7105TRPBF-VB
Part Number
Enhancement
Channel Mode
2
Number of Channels
N-Channel, P-Channel
Transistor Polarity
-55C
Minimum Operating Temperature
Reel
Packaging
SMD/SMT
Mounting Style
±20V
Vgs - Gate - Source Voltage
30V, -30V
Vds - Drain - Source Breakdown Voltage
+150C
Maximum Operating Temperature
6nC, 41.5nC
Qg - Gate Charge
1V, -1V
Vgs th - Gate - Source Threshold Voltage
18mΩ, 40mΩ
Rds On - Drain - Source Resistance
3.2W
Pd - Power Dissipation
8A, -8A
Id - Continuous Drain Current
SOIC-8
Package-Case
