TOSHIBA 
معرفی
ترانزیستور آیجیبیتی 1.2 کیلو ولت 40 آمپر با پکیج TO-3P
IGBT Transistor 1.2kV, 40A with TO-3P Package
Specifications
- Technology: Si
- Collector - Emitter Voltage VCEO Max: 1.2kV
- Continuous Collector Current aT 25 c: 40A
- Collector - Emitter Saturation Voltage: 1.9V
- Maximum Gate Emitter Voltage: -25V, +25V
- Pd - Power Dissipation: 230W
- Mounting Style: Through Hole
- Package/Case: TO-3P
- Minimum Operating Temperature: -55C
- Maximum Operating Temperature: +175C
- Packaging: Tube
مشخصات GT40QR21
GT40QR21
Part Number
-55C
Minimum Operating Temperature
Si
Technology
-25V, +25V
Maximum Gate Emitter Voltage
Tube
Packaging
40A
Continuous Collector Current aT 25 c
Through Hole
Mounting Style
+175C
Maximum Operating Temperature
1.9V
Collector - Emitter Saturation Voltage
1.2kV
Collector - Emitter Voltage VCEO Max
230W
Pd - Power Dissipation
TO-3P
Package-Case
