معرفی
ترانزیستور IGBT 600 ولت 20 آمپر با پکیج TO-263
IGBT Transistor 600V, 20A with TO-263 Package
Specifications
- Technology: Si
- Collector - Emitter Voltage VCEO Max: 600V
- Continuous Collector Current aT 25 c: 20A
- Collector - Emitter Saturation Voltage: 1.7V
- Maximum Gate Emitter Voltage: 30V
- Pd - Power Dissipation: 83W
- Mounting Style: SMD/SMT
- Package/Case: TO-263
- Minimum Operating Temperature: -55C
- Maximum Operating Temperature: +150C
- Packaging: Reel
مشخصات آی جی بی تی NCE10TD60BD
آی جی بی تی NCE10TD60BD
Part Number
20A
Continuous Collector Current aT 25 c
-55C
Minimum Operating Temperature
Si
Technology
30V
Maximum Gate Emitter Voltage
Reel
Packaging
SMD/SMT
Mounting Style
+150C
Maximum Operating Temperature
1.7V
Collector - Emitter Saturation Voltage
600V
Collector - Emitter Voltage VCEO Max
83W
Pd - Power Dissipation
TO-263
Package-Case

NCE Power

