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مشخصات ماسفت IRFB59N10DPBF-VB
ماسفت IRFB59N10DPBF-VB
Part Number
1
Number of Channels
Enhancement
Channel Mode
N-Channel
Transistor Polarity
-55C
Minimum Operating Temperature
Tube
Packaging
Through Hole
Mounting Style
±20V
Vgs - Gate - Source Voltage
+175C
Maximum Operating Temperature
100V
Vds - Drain - Source Breakdown Voltage
2V
Vgs th - Gate - Source Threshold Voltage
17mΩ
Rds On - Drain - Source Resistance
90nC
Qg - Gate Charge
70A
Id - Continuous Drain Current
355W
Pd - Power Dissipation
TO-220-3
Package-Case
