مشخصات ماسفت NCE65T180F
ماسفت NCE65T180F
Part Number
1
Number of Channels
Enhancement
Channel Mode
N-Channel
Transistor Polarity
-55C
Minimum Operating Temperature
Tube
Packaging
Through Hole
Mounting Style
±30V
Vgs - Gate - Source Voltage
+150C
Maximum Operating Temperature
650V
Vds - Drain - Source Breakdown Voltage
3V
Vgs th - Gate - Source Threshold Voltage
36nC
Qg - Gate Charge
33.8W
Pd - Power Dissipation
21A
Id - Continuous Drain Current
150mΩ
Rds On - Drain - Source Resistance
TO-220FP-3
Package-Case

NCE Power
