VBsemi 
مشخصات ماسفت FQPF4N60-VB
ماسفت FQPF4N60-VB
Part Number
1
Number of Channels
Enhancement
Channel Mode
N-Channel
Transistor Polarity
-55C
Minimum Operating Temperature
Tube
Packaging
Through Hole
Mounting Style
±30V
Vgs - Gate - Source Voltage
+150C
Maximum Operating Temperature
650V
Vds - Drain - Source Breakdown Voltage
2V
Vgs th - Gate - Source Threshold Voltage
4A
Id - Continuous Drain Current
48nC
Qg - Gate Charge
30W
Pd - Power Dissipation
2.5Ω
Rds On - Drain - Source Resistance
