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معرفی
ماسفت 650 ولت 4 آمپر نوع N با پکیج TO-220
N-CH MOSFET 650V, 4A with TO-220 Package
Specifications
- Package/Case: TO-220
- Vds - Drain - Source Breakdown Voltage: 650V
- Id - Continuous Drain Current: 4A
- Transistor Polarity: N-Channel
- Channel Mode: Enhancement
- Number of Channels: 1
- Vgs th - Gate - Source Threshold Voltage: 2V
- Vgs - Gate - Source Voltage: ±30V
- Rds On - Drain - Source Resistance: 2.5Ω
- Pd - Power Dissipation: 30W
- Qg - Gate Charge: 48nC
- Mounting Style: Through Hole
- Minimum Operating Temperature: -55C
- Maximum Operating Temperature: +150C
- Packaging: Tube
مشخصات ماسفت FQPF4N60-VB
ماسفت FQPF4N60-VB
Part Number
1
Number of Channels
Enhancement
Channel Mode
-55C
Minimum Operating Temperature
Tube
Packaging
Through Hole
Mounting Style
±30V
Vgs - Gate - Source Voltage
+150C
Maximum Operating Temperature
650V
Vds - Drain - Source Breakdown Voltage
2V
Vgs th - Gate - Source Threshold Voltage
4A
Id - Continuous Drain Current
48nC
Qg - Gate Charge
30W
Pd - Power Dissipation
2.5Ω
Rds On - Drain - Source Resistance
