مشخصات IRF7821TRPBF-VB
IRF7821TRPBF-VB
Part Number
1
Number of Channels
Enhancement
Channel Mode
N-Channel
Transistor Polarity
-55C
Minimum Operating Temperature
Reel
Packaging
SMD/SMT
Mounting Style
±20V
Vgs - Gate - Source Voltage
30V
Vds - Drain - Source Breakdown Voltage
+150C
Maximum Operating Temperature
1V
Vgs th - Gate - Source Threshold Voltage
8mΩ
Rds On - Drain - Source Resistance
15nC
Qg - Gate Charge
4.1W
Pd - Power Dissipation
13A
Id - Continuous Drain Current
SOIC-8
Package-Case

VBsemi
