TOSHIBA 
مشخصات ماسفت TK100E06N1
ماسفت TK100E06N1
Part Number
1
Number of Channels
Enhancement
Channel Mode
N-Channel
Transistor Polarity
-55C
Minimum Operating Temperature
Tube
Packaging
Through Hole
Mounting Style
±20V
Vgs - Gate - Source Voltage
1.9mΩ
Rds On - Drain - Source Resistance
+150C
Maximum Operating Temperature
60V
Vds - Drain - Source Breakdown Voltage
2V
Vgs th - Gate - Source Threshold Voltage
140nC
Qg - Gate Charge
263A
Id - Continuous Drain Current
255W
Pd - Power Dissipation
TO-220-3
Package-Case
