Tokmas 
معرفی
ماسفت GaN FET با ولتاژ 650 ولت و جریان 10 آمپر نوع N ترانزیستور قدرت حالت افزایشی با پکیج TO220F-3L
650V GaN-on-Silicon Enhancement-mode Power Transistor, 10A N-Channel MOSFET with TO220F-3L Package
Specifications
- Package/Case: TO-220-3
- Vds - Drain - Source Breakdown Voltage: 650V
- Id - Continuous Drain Current: 10A
- Transistor Polarity: N-Channel
- Channel Mode: GaN
- Number of Channels: 1
- Vgs th - Gate - Source Threshold Voltage: 1.9V
- Vgs - Gate - Source Voltage: +7V
- Rds On - Drain - Source Resistance: 160mΩ
- Pd - Power Dissipation: 96W
- Qg - Gate Charge: 7.2nC
- Mounting Style: Through Hole
- Minimum Operating Temperature: -55C
- Maximum Operating Temperature: +150C
- Packaging: Tube
مشخصات گانفت CID10N65F
گانفت CID10N65F
Part Number
1
Number of Channels
GaN
Channel Mode
-55C
Minimum Operating Temperature
+7V
Vgs - Gate - Source Voltage
Tube
Packaging
Through Hole
Mounting Style
+150C
Maximum Operating Temperature
7.2nC
Qg - Gate Charge
650V
Vds - Drain - Source Breakdown Voltage
1.9V
Vgs th - Gate - Source Threshold Voltage
10A
Id - Continuous Drain Current
160mΩ
Rds On - Drain - Source Resistance
96W
Pd - Power Dissipation
TO-220
Package-Case
