Tokmas 
مشخصات گانفت CID10N65F
گانفت CID10N65F
Part Number
1
Number of Channels
Enhancement
Channel Mode
N-Channel
Transistor Polarity
-55C
Minimum Operating Temperature
+7V
Vgs - Gate - Source Voltage
Tube
Packaging
Through Hole
Mounting Style
+150C
Maximum Operating Temperature
7.2nC
Qg - Gate Charge
650V
Vds - Drain - Source Breakdown Voltage
1.9V
Vgs th - Gate - Source Threshold Voltage
10A
Id - Continuous Drain Current
160mΩ
Rds On - Drain - Source Resistance
96W
Pd - Power Dissipation
TO-220-3
Package-Case
