VBsemi 
مشخصات STB75NF75T4-VB
STB75NF75T4-VB
Part Number
1
Number of Channels
Enhancement
Channel Mode
N-Channel
Transistor Polarity
-55C
Minimum Operating Temperature
SMD/SMT
Mounting Style
Tube
Packaging
±20V
Vgs - Gate - Source Voltage
80V
Vds - Drain - Source Breakdown Voltage
+175C
Maximum Operating Temperature
6mΩ
Rds On - Drain - Source Resistance
2.5V
Vgs th - Gate - Source Threshold Voltage
53.5nC
Qg - Gate Charge
120A
Id - Continuous Drain Current
370W
Pd - Power Dissipation
TO-263
Package-Case
