IXYS 
مشخصات ماسفت IXTQ130N10T
ماسفت IXTQ130N10T
Part Number
1
Number of Channels
Enhancement
Channel Mode
N-Channel
Transistor Polarity
-55C
Minimum Operating Temperature
Tube
Packaging
Through Hole
Mounting Style
±20V
Vgs - Gate - Source Voltage
28ns
Rise Time
+175C
Maximum Operating Temperature
100V
Vds - Drain - Source Breakdown Voltage
47ns
Fall Time
2.5V
Vgs th - Gate - Source Threshold Voltage
9.1mΩ
Rds On - Drain - Source Resistance
104nC
Qg - Gate Charge
130A
Id - Continuous Drain Current
360W
Pd - Power Dissipation
TO-3P
Package-Case
