مشخصات ماسفت NCE65TF099T
ماسفت NCE65TF099T
Part Number
1
Number of Channels
Enhancement
Channel Mode
N-Channel
Transistor Polarity
-55C
Minimum Operating Temperature
Tube
Packaging
Through Hole
Mounting Style
±30V
Vgs - Gate - Source Voltage
+150C
Maximum Operating Temperature
650V
Vds - Drain - Source Breakdown Voltage
3V
Vgs th - Gate - Source Threshold Voltage
45nC
Qg - Gate Charge
89mΩ
Rds On - Drain - Source Resistance
38A
Id - Continuous Drain Current
322W
Pd - Power Dissipation
TO-247
Package-Case

NCE Power
