TOSHIBA 
مشخصات ماسفت TK62N60W
ماسفت TK62N60W
Part Number
1
Number of Channels
Enhancement
Channel Mode
N-Channel
Transistor Polarity
-55C
Minimum Operating Temperature
Tube
Packaging
Through Hole
Mounting Style
±30V
Vgs - Gate - Source Voltage
+150C
Maximum Operating Temperature
600V
Vds - Drain - Source Breakdown Voltage
2.7V
Vgs th - Gate - Source Threshold Voltage
33mΩ
Rds On - Drain - Source Resistance
61.8A
Id - Continuous Drain Current
180nC
Qg - Gate Charge
400W
Pd - Power Dissipation
TO-247
Package-Case
