مشخصات ماسفت FQP50N06-VB
ماسفت FQP50N06-VB
Part Number
1
Number of Channels
Enhancement
Channel Mode
N-Channel
Transistor Polarity
-55C
Minimum Operating Temperature
Tube
Packaging
Through Hole
Mounting Style
±20V
Vgs - Gate - Source Voltage
60V
Vds - Drain - Source Breakdown Voltage
+175C
Maximum Operating Temperature
1V
Vgs th - Gate - Source Threshold Voltage
11mΩ
Rds On - Drain - Source Resistance
47nC
Qg - Gate Charge
60A
Id - Continuous Drain Current
136W
Pd - Power Dissipation
TO-220-3
Package-Case

VBsemi
